| 发明名称 |
METHOD FOR PROVIDING A SILICIDE ELECTRODE ON A SUBSTRATE SUCH AS A SEMICONDUCTOR SUBSTRATE |
| 摘要 |
A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide. |
| 申请公布号 |
DE2861841(D1) |
申请公布日期 |
1982.07.08 |
| 申请号 |
DE19782861841 |
申请日期 |
1978.06.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CROWDER, BILLY LEE;ZIRINSKY, STANLEY |
| 分类号 |
H01L21/60;H01B13/00;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;H01L29/49;H01L29/78;(IPC1-7):01L21/285;01L29/62 |
主分类号 |
H01L21/60 |
| 代理机构 |
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