| 摘要 |
<p>PURPOSE:To remove a very small amount of organic matter by a method wherein, when a liquid-phase epitaxial growing is performed by providing a hole on a semiconductor substrate or an epitaxial crystal, the above is treated with concentrated sulfuric acid as a pre-treatment. CONSTITUTION:The substrate, whereon an SiO2 film has been removed, is cleaned with trichlene, and after methyl alcohol substituted cleaning has been performed, the above is processed with concentrated sulfuric acid. Then, when an InP layer is epitaxially grown by the second epitaxial growtn using the substrate whereon an etching was performed using the prescribed etchant, the wetting with melt is improved even for the mesa section of a four element crystal InGaAsP layer 3, and an InP layer 5 can be epitaxially grown on an InP buffer layer 2 with an excellent reproducibility. Accordingly, the yielding rate of crystal growth can be improved.</p> |
