| 摘要 |
PURPOSE:To prevent the deterioration of film quality due to the mixture of ingredients other than the desired ones by a method wherein raw gas is subjected to a plasma, and when it comes in contact with a heated substrate, the substrate to be processed is heated up to 450 deg.C or above, and a plasma CVD is grown. CONSTITUTION:Silicon is grown by the plasma CVD while heating the substrate to be processed at the temperature of 450 deg.C or above which is higher than that heretofore in use, harmful ingredients such as hydrogen or fluorine or the like is removed while the growing is in progress, and a silicon layer having an excellent film quality, to be used for graphoepitaxial, is obtained. Accordingly, the conductive type of the film is hard to be controlled while the growing is in progress due to the introduction of impurities and after the high temperature annealing has been performed, air bubbles and exforiation are not generated and the film is stabilized, thereby enabling to activate the impurities easily and to obtain the desired conductive type resistance value. |
