发明名称 COPPER ALLOY FOR SEMICONDUCTOR DEVICE LEAD
摘要 PURPOSE:To improve lead material properties with respect to radiation of heat, resistance to high temperature, strength, solder application, and plating adhesion by a method wherein Ni and P are added to the oxygen free Cu base whose quantities are so small that they cause little deterioration of alloy properties as to workability and thermal conductivity. CONSTITUTION:Oxygen free Cu containing inevitable impurities including less than 0.0010wt% of oxygen is used as the alloy base. A 0.01-1.0wt% of Ni and a 0.001-0.1wt% of P are added to the base. A Cu alloy containing such very small quantities of additives is quite excellent in heat radiation, resistance to high temperature, strength, application of solder, and adhesion of plating.
申请公布号 JPS57109356(A) 申请公布日期 1982.07.07
申请号 JP19800183966 申请日期 1980.12.26
申请人 NIPPON KOGYO KK 发明人 KANOU AKIRA;TSUJI MASAHIRO;KAWAUCHI SUSUMU
分类号 C22C9/00;C22C9/06;H01L23/48;H01L23/495 主分类号 C22C9/00
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