发明名称 POSITIONAL MATCHING METHOD BETWEEN MASK SUBSTRATE AND WAFER
摘要 PURPOSE:To perform a highly accurate positional matching between the wafer and the mask substrate by a method wherein the image of matching reference to be used for wafers is image formed on the matching reference for masks on the surface of the mask substrate through the intermediary of a Fresnel zone pattern, and the mutual positional information of the mask substrate and the wafer is obtained. CONSTITUTION:The matching reference 2 for wafers is provided on the wafer 1, and at the same time, the matching reference 4 for masks is provided on the surface of the mask substrate 3. Then, the Fresnel zone pattern 5 is formed at the section corresponding to the matching reference 4 for masks located on the reverse side of the mask substrate 3. The image of the matching reference 2 for wafers is image formed on the matching reference 4 for masks located on the surface of the mask substrate 3 through the intermediary of the Fresnel zone pattern 5, matching references 2 and 4 for wafers and masks are superpositioned in the same plane surface, and the mutual positional information on the mask reference 3 and the wafer 1 can be obtained.
申请公布号 JPS57109335(A) 申请公布日期 1982.07.07
申请号 JP19800185906 申请日期 1980.12.26
申请人 TOKYO SHIBAURA DENKI KK 发明人 SHINOZAKI TOSHIAKI
分类号 H01L21/30;G03F9/00;H01L21/027;(IPC1-7):01L21/30 主分类号 H01L21/30
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