| 摘要 |
PURPOSE:To form the photoresist pattern having a high form ratio by a method wherein a negative type resist films, which were formed in double-layer or triple layer and exposed, are developed and treated simultaneously. CONSTITUTION:The first layer of resist film is formed on a substrate 1, and a protective film for the resist is coated on the resist film. After the protective film has been removed, the resist film is exposed by irradiating ultraviolet rays through the intermediary of a photomask. On the exposed first layer of resist film, the second layer of resist film and a resist protective film are formed. After the resist protective film has been removed, the resist film is exposed by irradiating ultraviolet rays through the resist film of the second layer. And a non-exposed parts 7 and 7' are washed away by a developing solvent, exposed parts 6 and 6' are light-cured, and the resist pattern is remained on the substrate. |
