| 摘要 |
PURPOSE:To reduce dispersion of junction capcitance improving withsand power, by providng a Schottky contact metallic layer electrically connected parallel to a P-N junction surface, distributed on a substrate along the edge of at least a part of the P-N junction surface. CONSTITUTION:On the surface of an N<-> type layer 32 provided on one of the surfaces of an N<+> type silicon substrate, an N<-> type layer 32 is selectively formed by diffusion in the manner that a metallic layer such as titanium film 341 is formed Shottky contacting the N<-> layer 32 along the edge of at least a part of a junction 35 from outside. The Schottky contact 36 and the P-N junction 35 are electrically connected parallel to each other since the titanium film 341 is provided on a part of the surface of the P<+> type region 33. Moreover, electrodes are formed on the titanium film 341 by laminating a platinum film 342 and a metallic film 343. |
