| 摘要 |
PURPOSE:To enable to form the electrode of microscopic measurements having an excellent adhesive strength by a method wherein the first and the second metal films are selectively removed in such a manner that the second metal film will be making an overhunging structure to the first metal film, and a part of the substrate is exposed. CONSTITUTION:The Al 4, a part of which was exposed using an etching solution with Nb 5 used as a mask, is removed by performing an etching in such a manner that the Al 4 becomes larger than the pattern width of the Nb 5, and the above is formed into an overhanging structure. Then Ta 8, having almost the same shape as the desired pattern, is coated on the GaAs substrate through a mask hole 7 using a vacuum evaporating method. Then, Al 4 is removed by performing an etching, and the metal film alone of the coated Ta 8 is remained on the GaAs substrate 1. |
