发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve mounting performance by a method wherein on a substrate for element arrangement consisting of copper or copper alloy, a semiconductor element which is formed by lamination of a barrier metal layer and an alloy layer which has gold or the like as a pricipal component is mounted. CONSTITUTION:After a bipolar silicon semiconductor element 104 which is formed by lamination of a vanadium layer 105, a nickel layer 106, a gold and germanium alloy layer and a gold layer, is laminated on an island region 102 of a lead frame consisting of single element of copper or copper alloy, it is mounted by heating and pressing, and a junction layer 109 consisting of full solid solution of Au-Ge-Cu is formed. Accordingly, because of a junction with intermediaries of a barrier metal layer consisting of layers 105, 106 and a junction layer 109 which does not contain silicon, firm mounting can be attained.
申请公布号 JPS57109347(A) 申请公布日期 1982.07.07
申请号 JP19800185930 申请日期 1980.12.26
申请人 TOKYO SHIBAURA DENKI KK 发明人 ITOU YOSHIO;KOBAYASHI MITSUO;TETSUYA TOSHIO;USUDA OSAMU
分类号 H01L21/52;H01L21/58;H01L21/60;H01L23/48;H01L23/495 主分类号 H01L21/52
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