| 摘要 |
PURPOSE:To prevent defects of a pattern due to dust in preparation of a photomask by exposure to electron beams, by coating a resin film requiring a solvent different from a solvent of a resist film on the resist film. CONSTITUTION:A light-shielding film 2 of chromium or the like, an electron beam resist film 3, such as polyglycidyl methacrylate, and a resin layer 4 such as PVA using a solvent different from that of said resist film 3, are formed on a mask substrate 1. This resist film 3 is exposed to electron beams through the resin layer 4 in vacuum, cleared of the resin film 4 in normal pressure, and the resist film is developed, thus permitting dust introduced and attached dust upon restoring the pressure to the normal to be removed in a resin film 4 removal step, and a photomask free from defects to be obtained. |
