SEMICONDUCTOR LASER AND METHOD OF MAKING THE SAME

摘要

In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape, the improvement that said substrate has a terrace part on its principal face, the active layer has two parallel bent parts defining a stripe shape active region facing said current injection region inbetween and said stripe shape active region is disposed with a specified angle to said principal face.