| 摘要 |
PURPOSE:To obtain fine crystals advantageous for patterning by maintaining the substrate temp. during formation of aluminum films higher by specific values than photoresist treating temps. CONSTITUTION:An aluminum film 3 is vapor-deposited via an insulation film 2 on a silicon wafer 1. The surface temp. of the wafer 1 during the vapor deposi- tion is maintained at about 170 deg.C higher by 10-20 deg.C than photoresist treating temps. and the crystals of the aluminum film grow to about 0.3-0.4mu diameters. Next, photoresist is coated and is subjected to prebaking for about 10min at about 100 deg.C, after which light is cast thereto to form a desired pattern 4, but the crystal diameters do not change. Further, it is subjected to post-baking for about 60min at about 150 deg.C, and is etched, after which the photoresist is removed, but the crystal diameters do not change. Finally, it is subjected to alloying for about 30 min at about 450 deg.C, whereby desired aluminum wirings 3B are formed. The crystal diameters after the alloying increase to about 0.1- 1.2mu, which are sufficient sizes for wiring life. |
