| 摘要 |
PURPOSE:To make it possinle to maintain optical concentration by an ordinary film thickness, by sticking, on a light permeable substrate, a light shielding film whose dry etching speed is lower than the elimination speed with which a resist film is eliminated, sticking, on the light shielding film, an intermediate layer whose etching speed is lower than the light shielding film, and performing the dry etching of the light shielding film using the patternized intermediate layer as a mask. CONSTITUTION:On a light permeable substrate 1, a light shielding film 2 is stuck whose dry etching speed is lower than the elimination speed with which a resist film is eliminated by a dry etching method. Before or at the same time when a resist film is eliminated by a dry etching method, on the light shielding film 2, an intermediate layer 3 is stuck, which has a film thickness to be subjected to dry etching and whose etching speed is lower than the light shielding film 2. Then, on the intermediate layer 3, a resist film 4 is spread, and the resist film 4 is patternized. By using a patternized resist film 7 as a mask, the intermediate layer 3 is subjected to dry etching and patternized. Then by using the patternized intermediate layer 9 as a mask, the light shielding film 2 is subjected to dry etching. Thereby, a light shielding film pattern 10 can be sufficiently formed, even if the film thickness of the light shielding film 2 is one which has an ordinary optical concentration. |
