| 摘要 |
PURPOSE:To obtain a deposition film with uniform and excellent quality over a large area while the utilization efficiency of a raw material gas is increased, by introducing either gaseous raw material or gaseous halogen oxidizing agent along a substrate surface, and introducing the other gas toward the substrate from a plurality of exhaust outlets arranged along the flow direction of the other gas. CONSTITUTION:In a vacuum chamber 120, a substrate 118 is arranged almost horizontally to gas flow. One kind of gas is introduced from the upper stream, and the other gas is introduced along the direction of the flow, which is introduced in several steps. Gas from gas cylinders 101 and 102 is introduced through a first gas introducing pipe 109, and gas from gas cylinders 103-105 is introduced through a second gas introducing pipe 110. In such a gas contact method, gaseous raw material or gaseous halogen oxidizing agent is introduced in several steps, and travels on the substrate 118 while contact and reaction are repeated. Therefore, the formed precursor effectively contributes to deposition, so that utilization efficiency of the gaseous raw material can be increased.
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