| 摘要 |
<p>PURPOSE:To obtain a device having a high withstand voltage by a method wherein when a reverse mesa type semiconductor pellet is made, initially the entire surface of an electrode layer is covered with wax, a shallow and wide slot is provided in the mesa slot formed by using a dicer having a flat cut face, again the wax is coated and a V-figure deep mesa slot is provided in the slot by using a dicer having a V-figure cut face. CONSTITUTION:A base layer 2 is provided on a collector layer 1 and an emitter region 3 for pellet use is formed in the region 2. Subsequently, this side is covered with a surface sheet 15, an electrode layer 4 is attached to an opposite face and a reverse mesa slot is provided through a dicing to form the pellets including the region 3 respectively. For reasons of this process, wax 16 is coated on the entire face of the electrode layer 4, and a shallow and wide slot 21 to invade into the layer 1 is formed by using a first dicer 20 having a flat cut face. Thereafter, again the wax 22 is coated, a mesa slot 24 reaching to the layer 2 is formed in the slot 21 by utilizing a dicer 23 having a V-figure cut face and a damage layer 25 is removed through an etching, thereafter it is separated into an individual pellet.</p> |
