| 摘要 |
PURPOSE:To improve a uniformity property and a reproduction property by utilizing concurrently at least one element of Si, Ge and Sn contained in IVb family element as an impurity for doping use and at least one element of S, Se and Te contained in Vb family element respectively in a vapor growth for III-V family compound semiconductor through a halogen process. CONSTITUTION:In a vapor growth of III-V family compound semiconductor through a halogen process, at least one element of Si, Ge and Sn contained in IVb family element as the impurity for doping use and at least one element of Se, S and Te contained in VIb family element are concurrently used to obtain a desired impurity density. If Si, Ge and Sn may be used for the impurity, they would have a positive temperature characteristic wherein the impurity density is raised as the temperature of the substrate rises. If S, Se and Te may be used, they would have a negative temperature dependency characteristic. Therefore, an arbitrary temperature dependency can be obtained by using concurrently the abovementioned elements. |
