| 摘要 |
PURPOSE:To reduce a contact resistance of a wiring and then obtain an ideal electric connection by providing a high temperature of annealing in oxygen after forming the wiring when a molybdenum silicide layer is provided as a wiring connected to a semiconductor layer of a semiconductor substrate. CONSTITUTION:A thick field oxide film 1 is provided in the circumferential portion of P type Si substrate 3 by utilizing for its base a P<+> type channel cut region 2, and an N<+> type drain region 5 and a source region 6 are diffusion- formed respectively on the surfacial portion of the substrate 3 surrounded by said oxide film 1. Subsequently, a polycrystal Si drain electrode 8 is provided through a dielectric film 7 for capacitor on the region 5 and a polycrystal Si gate electrode 10 is provided through a gate insulation film 9 on the substrate 3 between the regions 6 and 5. Thereafter, the entire surface is covered with a PSG film 11, a contact window 12 is provided on the region 6, a MoSi2 film 13 is laminated over the entire surface including the window 12 and a MoSi2 film 14 making contact with the region 6 is left as a wiring through etching. Subsequently, an annealing at 1,000-1,050 deg.C is conducted in O2 atmosphere of a normal pressure to polycrystallize the film 14 having a low resistance. |
