| 摘要 |
PURPOSE:To prevent a swap gate of a magnetic bubble memory element from error operation and stabilize the action by setting a conductor pattern on a transfer circuit pattern for the gate through an inter-layer insulating film. CONSTITUTION:Pulse current I1 is applied to a swap gate 11 of a bubble memory element. Thus a bubble B on a parmalloy elementary chip 4 is transferred to an elementary chip 6 through an elementary chip 5 and a bubble B on an elementary chip 7 to an elementary chip 8 through the elementary chip 5 to exchange bubbles in a minor loop with that on a major line, inputting data to the minor loop. By setting a conductor pattern 12 on the parmalloy elementary chip through an insulating film and applying pulse current I1, error operation such as bubble transfer from the elementary chip 4 to the chip 8 or from the chip 7 to the chip 6 is prevented. The phase and width of pulse current I1 may consist with that of I2. |
