ALUMINIUM-TANTAL LAYERS FOR THIN-FILM CONNECTIONS AS WELL AS FOR DISCRETE RESISTORS AND CAPACITORS

摘要

Al-Ta alloy films containing 2 to 20 atomic % of Ta in Al exhibit an improved temperature stability. An Al-alloy film containing 7 atomic % of Ta has a resistivity of 60 mu OMEGA cm, a temperature coefficient of resistance of +100 ppm DEG /K and a sparking potential of about 400 V when anodizing in 0.1% H3PO4. An Al-alloy film containing 15 atomic % of Ta has a specific resistance of 200 mu OMEGA cm, a temperature coefficient of resistance of -100 ppm DEG /K and a sparking potential of about 300 V when anodizing in 0.1% H3PO4. The alloy films are applied on a non-conductive substrate, as by RF-cathode sputtering in a desired thickness and are useful for thin-film circuits, discrete resistors, capacitors, etc.