| 摘要 |
In a low reflection type photomask (hard mask) having a masking film (7) of a metal selected from chromium or tantalum provided, through or without an intermediary low reflection layer (8), on a transparent substrate (6) and further having a low reflection layer (8) provided on the metal film, use is made of a composite layer containing an oxide and nitride of a metal selected from chromium and tantalum as the low reflection layer (5). The composite layer (8) is substantially equal in etching speed to the metal masking film (7), and the photomask obtained is free from image deterioration caused by protrusions such as visors, burrs, or fractures, as observed in the photomask of the prior art using metal oxide films as low reflection layers, and also has excellent durability. |
