Field effect transistors.

摘要

An FET device comprises a substrate with source and drain regions separated by a gate structure. Between the gate and substrate is an insulator formed of a cubic fluorite structure material that is lattice matched within 1% to the substrate. The insulator may be a group II fluoride such as CayCd1-yF2 (O ≤ y≤ 1Sr2Ba1-zF2 (O≤z≤ 1), or BaxCa1-xF2 (O ≤ x ≤ 1), or an oxide such as Ce02, PbO2. The substrate may be a bulk semiconductor or an epitaxial layer such as Si, InP, GaAs, GaxAl1-xAs, GaSb, InAs, or AlAs.