| 摘要 |
PURPOSE:To reduce damage affected on a semiconductor element even if a negative voltage is induced in a substrate during thin film formation by a method wherein in the formation of an insulating thin film by a high frequency sputtering method, a temperature of a substrate is maintained at a specific value. CONSTITUTION:According to the experimental result on the effect of a substrate temperature on a high frequency sputtering method, when the substrate temperature is maintained to be 200 deg.C or below, a variation in a flat band voltage after formation of an SiO2 film is high, but because of restoration of the flat band voltage to an initial value through heat-treatment, a substrate temperature should be maintained at or below approximately 250 deg.C to minimize an effect on a characteristics of an element. On the other hand, because an etching speed is heightened and the film is degraded when the substrate temperature is lowered, a lowest limit of the substrate temperature should be set at or above 150 deg.C that is within a range in whcih an effect on a substrate bias by a fine configuration of an SiO2 film is not canceled. |
