| 发明名称 |
DIFFUSION SOURCE AND METHOD OF PRODUCING SAME |
| 摘要 |
The present invention is directed to a diffusion source for establishing a p-type conductivity region in a semiconductor device and to a method for preparing such diffusion source. The diffusion source consists of pure silicon powder diffused with a p-type impurity. |
| 申请公布号 |
JPS57104216(A) |
申请公布日期 |
1982.06.29 |
| 申请号 |
JP19810173134 |
申请日期 |
1981.10.30 |
| 申请人 |
WESTINGHOUSE ELECTRIC CORP |
发明人 |
CHIYANGU KUUEI CHIYUU;JIYOOJI UIRIAMU BOMISHIYU |
| 分类号 |
H01L21/223;C30B31/16;H01L21/22 |
主分类号 |
H01L21/223 |
| 代理机构 |
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代理人 |
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| 主权项 |
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