发明名称 |
Semiconductor laser device with facet passivation film |
摘要 |
A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of ( lambda /4)xm where lambda represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.
|
申请公布号 |
US4337443(A) |
申请公布日期 |
1982.06.29 |
申请号 |
US19800124266 |
申请日期 |
1980.02.25 |
申请人 |
HITACHI, LTD. |
发明人 |
UMEDA, JUN-ICHI;SHIMADA, TOSHIKAZU;NAKAMURA, MICHIHARU;KATAYAMA, YOSHIFUMI;KAJIMURA, TAKASHI;YAMASHITA, SHIGEO |
分类号 |
H01S5/00;H01S5/028;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|