Method of forming electrodes on the surface of a semiconductor substrate

摘要

There is provided a method of forming an electrode on the surface of a semiconductor substrate which comprises the steps of (A) depositing on the surface of a semiconductor substrate an insulation layer provided with at least one opening for contact between the electrode and the semiconductor substrate; (B) coating a plurality of spacer layers made of insulation material on the surface of the insulation layer inclusive of the contact opening; (C) selectively depositing a photoresist layer on the uppermost are of said plural spacer layers, said uppermost spacer layer in direct contact with the photoresist layer being designed to be etched at a lower rate than the immediately underlying spacer layer; (D) using the photoresist layers as a mask to selectively etch the spacer layers until said opening is exposed; (E) depositing a metal layer on the surface of the semiconductor substrate inclusive of said opening and photoresist layer; and (F) removing the photoresist layer and the portions of the metal layer formed, such that the portion of the metal layer which is deposited on the surface of the semiconductor substrate exposed through the opening constitute the electrode, and the spacer layers remaining on the insulation layer form protective layers for the surface of the semiconductor substrate.