| 摘要 |
PURPOSE:To improve writing characteristics by eliminating an increase in writing current, by providing an I<2>L type storage circuit, which has a discharging circuit for negative word lines, with a circuit which inhibiting the discharging circuit from operating during writing operation. CONSTITUTION:More than one I<2>L memory cell MC is arrayed in a matrix and its negative word line W- is made of a semiconductor layer; and a discharging circuit DIS discharging the negative word line is provided, thus constituting a semiconductor storage circuit. This semiconductor storage circuit is provided with a circuit INH which inhibits the discharging circuit DIS from operating during writing operation. Consequently, a transistor TD1 turns off during writing operation and any discharging voltage ID does not flows to the lower side W- of a selected word line, thereby preventing a writing current from increasing. |
