| 摘要 |
PURPOSE:To stabilize the operation of the laser element of double heterostructure of Ga1-xAlxAs and to prolong the lifetime thereof by interposing a buffer layer with no added Te between an activated layer and a clad layer of added Te. CONSTITUTION:An N type GaAs current restricting layer 22 is formed on a P type GaAs substrate 21, a V shaped groove 27 is provided by applying anisotropic etching thereto and a P type Ga0.62Al0.28As activated layer 24 with added Ge is laid on a P type Ga0.45Al0.55As clad layer 23 with Zn added whereby the crystallinity and flatness of the activated layer are improved. Next, an N type Ga0.45Al0.35As clad layer 25 with Te added is grown through the intermediary of an N type Ga0.82Al0.18As buffer layer 30 with Si added, which contains no Te, and the N type clad layer containing defects caused by Te and the activated layer promoting deterioration by re-connection of an electronic positive hole are separated from each other, whereby the deterioration is prevented. Then, an N type GaAs cap layer 26 with Te added and electrodes 1 and 8 are laminated and thereby the device is completed. The thickness of the activated layer 24 and of the buffer layer 30 is made maximum in the center of the V shaped groove and thus the light in the layer 24 is led effectively to the central part of the device. |
