| 摘要 |
PURPOSE:To save gold material to be used and to facilitate a bonding method by pressing linear or particle gold material smaller than a pellet size as a metal on the surface of a base side member when a semiconductor element pellet is bonded with metal formed on the surface of the member. CONSTITUTION:Before a pellet 6 such as a semiconductor transistor is secured, a gold wire cut in the prescribed length or gold particles 8 are pressed on the surface of a tab 5 as the previous step, and the pellet 6 is pressed via the gold wire or particles on the tab 5. The pellet 6 is continuously pressed while heating the tab 5 or applying vibration to the pellet 6, the gold wire or particles 8 are molten between the pellet 6 and the tab 5 to produce gold-silicon eutectic crystal while entirely expanding the gold to be secured to each other. In this manner, the quantity of gold protruded from the outer periphery can be extremely reduced, thereby decreasing the quantity of used gold. |
