| 摘要 |
PURPOSE:To cause no strain in an activated layer and to obtain a high luminous efficiency by making a window in a semiconductor layer for narrowing the current and by forming a heteroconductive type connection layer epitaxially so that the surface thereof is smooth by utilizing the characteristic of epitaxial growing. CONSTITUTION:An N type Inp32, an In1-xGaxAs1-yPy activated layer 33, a P type InP34 and an N type In1-x'Gax'As1-y'Py' 35 are formed epitaxially in sequence on an N type InP substrate 31 and a part of the layer 35 is etched selectively by a liquid wherein the ratio of H2SO4:H2O2:H2O=5:1:1. Next, by utilizing the characteristic of the epitaxial growing, P<+> type In1-x''Gax''As1-y''Py'' 36 one to three times thicker than the layer 34 is grown, a P side electrode AuZn 37 is prepared on the flat surface, while an N side electrode AuGeN is prepared on the substrate 31, and a window is made on the N side. According to this constitution, the absence of an insulating layer of poor thermal conductance enables excellent radiation of heat and reduces the deterioration of the element. And, since the application of proton is not used as a method for narrowing the current, the activated layer is not damaged and the luminous efficiency is excellent. |
