| 摘要 |
PURPOSE:To make vapor flow uniform and obtain a uniform film by a method wherein a vapor flow control cylinder is provided close to discharge electrodes. CONSTITUTION:Vapor of materials such as monosilane, diborane and phosphine is introdced into a vacuum chamber 41 and an amorphous semiconductor film is formed by a discharge phenomenon in the vacuum chamber 41. In above procedure, a vapor flow control cylinder 47 is provided close to discharge electrodes 42, 43 in the vacuum chamber 41. Holes are made at the lower part of the control cylinder 47 so as to provide uniform vapor flow. With above method a film which has not only a uniform thickness but also some uniform electric properties is obtained, so that overall characteristics of the film are improved. |
