| 摘要 |
A method for uniformly and reproducibly boron doping closely spaced silicon wafers (10-12) in a chamber (14) in a single batch by: first, forming a protective layer of silicon dioxide on the wafers by reaction with an oxidant gas; second, depositing boron on the wafers by introducing gaseous BCl<u3>u and H<u2>uO at a low flow rate and pressure (less than 10 torr for superior results which forms B<u2>uO<u3>u; and thirdly, heating the wafers in a non-oxidizing atmosphere to achieve redistribution of the boron in the wafers. |
