| 摘要 |
PURPOSE:To improve yield of semiconductor manufacture by a method wherein a resin layer is formed on a semiconductor substrate and is hardened by applying a laser beam thereto and the unhardened resin is removed and the hardened resin is used as a mask. CONSTITUTION:An insulating film 11 is formed on a surface of a silicon semiconductor substrate and an Al film is deposited on the film 11. An Al wiring 12 is formed by selectively etching the Al film. The surface of the semiconductor substrate is coated by resin 13 and then is exposed by a laser beam 14. A part of the resin over the Al wiring 12 is hardened by temperature rise due to reflection of the laser beam 14 by Al. The whole substrate 1 is immersed in solvent such as xylene and the unhardened part of the resin is removed, leaving the hardened part near Al wiring 12. Unnecessary parts are removed by ethcing using the hardened resin layer as a mask. |
