发明名称 MASK FOR ION BEAM EXPOSURE
摘要 PURPOSE:To perform the operation of an ion source in an ion beam exposure mask itself by forming a nitride film in a figure state on a membrane film made of a Pd film. CONSTITUTION:A Pd film 1 is bonded to a frame 3 made of metal, glass or ceramics, and a PdN 2 is formed in a figure state on the film 1. When the film 1 is used as a membrane film, the film 1 is heated from the front surface, for example, while slightly applying a back pressure to transmit hydrogen gas and to stop hydrogen transmitted through the film 1 by the nitride film 2 formed in the film 1. That is, the film 2 is formed in the figure state to exhaust the hydrogen gas in the figure state from between the figures of the film 2, and the film 1 is applied to a positive to radiate hydrogen ions in a figure state. Thus, an ion beam exposure mask itself can be operated as an ion source.
申请公布号 JPS63175424(A) 申请公布日期 1988.07.19
申请号 JP19870007532 申请日期 1987.01.16
申请人 SEIKO EPSON CORP 发明人 IWAMATSU SEIICHI
分类号 G03F1/00;G03F1/16;H01L21/027;H01L21/30 主分类号 G03F1/00
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