| 摘要 |
PURPOSE:To manufacture an X-ray mask having a thick frame with small warpage by using a thick substrate to become the frame of a mask, the rear surface of which is machined or chemically etched in advance to be partly removed. CONSTITUTION:A hole 2 is machined on the rear surface of an Si substrate to form the Si substrate 1 to become the frame of a mask, and SiN films 3 of mask substrate films are formed by an LPCVD method on both side surfaces of the substrate 1. Then, after the film 4 of the hole 2 of the rear surface of the substrate 1 is removed by plasma etching, a pattern 5 is formed of Au of an X-ray absorber on the film 3 of the front surface. Then, the part in which the film 4 is removed of the substrate is etched with KOH aqueous solution to form an X-ray mask. Thus, the X-ray mask having small warpage can be manufactured almost without influence to the film 3 of the mask substrate. |
