| 摘要 |
PURPOSE:To obtain a 2-way switching element which is simple in a manufactureing process, by a method wherein a semiconductor layer in at least 3-layer in combination of a P type, a I type, and a N type, is formed between an lower electrode and an upper electrode. CONSTITUTION:A metal or metallic oxide are vacuum-evaporated on a substrate 41 such as glass, plastic, quartz to form a lower electrode 42, a semiconductor layer 43 such as an amorphous silicon is formed on the lower electrode 42, and an upper electrode 44 is formed on the layer 43 in order named. The semiconductor layer 43 is formed by a plasma CVD, consisting of an N type (P type) layer 51, an I type or a P' layer 52 having a relative resistance of 10<8>OMEGAcm, and an N type (P type) layer 53, or consisting of an N type (P type) layer 54, an I type or P' layer 55, a P type (N type) layer 56, an I type or P' layer 57, and an N type (P type) layer 58. If the upper electrode and the lower electrode are formed of a material equalizing in a work function, a symmetrical switching property can be obtained. |
