| 摘要 |
PURPOSE:To enable to flatten easily the surface of an insulating layer on the first layer of wiring layer, and to prevent disconnection, etc., of the second layer of wiring layer to be formed on the insulating layer. CONSTITUTION:An SiO2 film 3 is formed on the surface of a semiconductor substrate 1, and the first layer 4 of wiring layer of Al is provided thereon. The insulating layer 5 of PSG is formed on the upper face of the film 3 and the layer 4. A photoresist layer 8 is applied on the layer 5. The layer 8 is etched physically, the convex parts 7 of the layer 5 are exposed, and the layer 8 is made as to remain at the concave parts 6. The convex parts 7 of the layer 5 are etched up to have the same height with the concave parts 6 making the remaining part of the layer 8 as the mask. The layer 8 is removed from the surface of the layer 5 by a resist peeling off liquid to enable to obtain the flattened layer 5. After then, the second layer of wiring layer is formed on the layer 5. |
