Method for planarizing non-level silicon dioxide in semiconductor devices.

摘要

The present invention provides a method for planarizing a non-uniform thickness of oxide, for example silicon dioxide, as is formed over oxide-filled trenches used in deep dielectric isolation in integrated circuits. The oxide is removed by a planarizing resist-etching process so that etching in thicker resist areas proceeds at a rate slower than etching in thinner resist areas. A preferred etchant is HF gas and etching is preferably at an elevated temperature.