发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>An abnormal surge voltage such as frictional static electricity is often applied to the external terminals of a MOSIC. In the past, the output MOS transistor in the MOSIC during normal handling of the device frequently will have its gate insulating film broken down by the application of such an abnormal surge voltage to the drain thereof. In order to prevent the gate insulating film from being broken down, in this manner a resistor is connected between the gate of the output MOS transistor and a drive circuit for driving that output MOS transistor. This construction using a resistor is superior to the construction in which the voltage to be applied to the drain of the output MOS transistor is clamped by the use of suitable clamp means only because, with the resistor arrangement, the output characteristics of the MOSIC are not restricted.</p>
申请公布号 GB2089611(A) 申请公布日期 1982.06.23
申请号 GB19810025368 申请日期 1981.08.19
申请人 HITACHI LTD;HITACHI MICROCOMPUTER ENGINEERING LTD 发明人
分类号 H01L27/14;H01L21/8234;H01L23/62;H01L23/64;H01L27/02;H01L27/06;H01L27/088;H01L27/092;H01L29/78;H01L31/08;H02H7/20;H03F1/42;H03F1/52;(IPC1-7):01L29/78 主分类号 H01L27/14
代理机构 代理人
主权项
地址