发明名称 Method for continuous production of niobium-germanium layers on a substrate
摘要 A method for producing layers of niobium-germanium on a continuous substrate. The layers are produced in a reaction chamber by the reduction of Nb and Ge which are halogenized by H2 on the substrate which is heated. Uniform high current density of the Nb3Ge layers throughout the length of the substrate is insured by the addition of a small amount of water vapor which is admixed, in accordance with the invention, to a reaction gas mixture containing H2 gas and Nb and Ge halogenides. The content of water vapor in the reaction gas is maintained between 0.05 and 0.001 volume percent.
申请公布号 US4336280(A) 申请公布日期 1982.06.22
申请号 US19800203968 申请日期 1980.11.04
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 MUELLER, ALFRED
分类号 C23C16/08;H01L39/24;(IPC1-7):B05D5/12 主分类号 C23C16/08
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