发明名称 |
Zener regulator in butted guard band CMOS |
摘要 |
Butted guard band CMOS circuits have a typical breakdown of about 7 volts. It is often desirable to operate circuitry from supplies greater than 7 volts. For example, 9 volts is a commonly used supply value. An isolated zener diode is fabricated into a CMOS integrated circuit so as to develop a voltage drop equal to guard band breakdown. The zener voltage is coupled by way of a diode-connected transistor to the operating circuitry. The diode drop substracts from the zener voltage so that the circuitry is always operated at a voltage below its breakdown.
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申请公布号 |
US4336489(A) |
申请公布日期 |
1982.06.22 |
申请号 |
US19800164851 |
申请日期 |
1980.06.30 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
FREDERIKSEN, THOMAS M. |
分类号 |
H01L27/07;H01L27/092;H03K19/003;(IPC1-7):G05F3/18 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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