发明名称 Zener regulator in butted guard band CMOS
摘要 Butted guard band CMOS circuits have a typical breakdown of about 7 volts. It is often desirable to operate circuitry from supplies greater than 7 volts. For example, 9 volts is a commonly used supply value. An isolated zener diode is fabricated into a CMOS integrated circuit so as to develop a voltage drop equal to guard band breakdown. The zener voltage is coupled by way of a diode-connected transistor to the operating circuitry. The diode drop substracts from the zener voltage so that the circuitry is always operated at a voltage below its breakdown.
申请公布号 US4336489(A) 申请公布日期 1982.06.22
申请号 US19800164851 申请日期 1980.06.30
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 FREDERIKSEN, THOMAS M.
分类号 H01L27/07;H01L27/092;H03K19/003;(IPC1-7):G05F3/18 主分类号 H01L27/07
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