发明名称 |
Method of making a high voltage V-groove solar cell |
摘要 |
A method is provided for making a high voltage multijunction solar cell which comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer (10) and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types (30, 32) separated by a gap. The method includes forming V-shaped grooves (16) in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face (e.g., 16a) of the groove while the other face (e.g., 16b) is shielded. A metallization layer (22) is applied and selectively etched away to provide connections between the unit cells.
|
申请公布号 |
US4335503(A) |
申请公布日期 |
1982.06.22 |
申请号 |
US19800219678 |
申请日期 |
1980.12.24 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
EVANS, JR., JOHN C.;CHAI, AN-TI;GORADIA, CHANDRA P. |
分类号 |
H01L27/142;H01L31/0352;(IPC1-7):H01L31/18 |
主分类号 |
H01L27/142 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|