| 摘要 |
PURPOSE:To single-crystallize a thin film on an insulating substrate without providing a grown nucleus by a method wherein a wave which has an atom-movable energy strength distribution and of which a period is in an integral ratio relation with an interatomic distance of a crystal or a spacing of the lattice, is irradiated on at least one direction of an amorphous thin film. CONSTITUTION:On a substrate 1 made of an insulating substance, for example, quartz or glass, a thin film 2 of, for instance, silicon is deposited. A wave 3 which has a periodical distribution of strength in the a direction and an almost fixed strength in the perpendicular direction to the a direction is irradiated on the surface of thin film 2 for a fixed hour. A laser beam, an electron beam, etc., is used for the wave, which is in a0=nr or r/n wherein n is an integer and r is an interatomic distance or lattice spacing when the thin layer 3 has been crystallized. A periodic wave 13 which has a strength distribution in a, for example, b direction superposing on the wave 3. (This period b0 has the relation similar to the relation in the a direction in the b-direction crystal structure). Further, the wave direction is not needed to be parallel with the surface of thin film 2, provided the condition of periodicity is met. With this structure, single-crystallization is available over a large area without placing of a crystalline nucleus. |
