| 摘要 |
PURPOSE:To stabilize potential of high-resistance layer under an active layer particularly, by connecting either source or drain electrode to an electrode which consists of materials for ohmic contact with a semi-insulating substrate of a composite semiconductor or a buffer layer. CONSTITUTION:A P type GaAs buffer layer 9 is provided on a GaAs semi-insulating substrate 8. P type electrodes 11, 12 are formed by accumulating Au-Zn and Au for ohmic contact with it. A part of electrodes terminals 6, 7 derived from source and drain electrodes 3, 4 formed on an N type GaAs active layer 2 is attached to the electrodes 11, 12. A part of electrodes 6, 7 is directly contacted directly on a buffer layer 9 as usual. Accordingly, the buffer layer 9 is always fixed to the potential of source and drain regardless of its dielectric types. It neither floats nor varies in depletion layer width. The current is stabilized between source and drain. |
