| 摘要 |
PURPOSE:To prevent the charging of a specimen during lithography using electron beam exposure or others by a method wherein an antistatic agent is coated in air on a resist coated on the specimen by means of spray or spinner, and then a charged beam is irradiated. CONSTITUTION:For example, a resist 1 film 2 of PMMA or the like is coated on a silicon wafer 1 by means of a spinner to be prebaked. An antistatic agent 11, which is 500-1,000Angstrom thick, of CRYATON, for example, is uniformly coated on the upper surface of the resist film 2 and the side of the wafer 1. A specimen with this structure is fixed into a cassette 4 on an XY table 6, and also the antistatic agent 11 is shorted to the cassette 4 via a contact 12 and grounded. Under this stage, a desired pattern is lithographed by means of electron beam exposure. After lithographing, the antistatic agent 11 is removed with alcohol or others to apply development. With this process, charging of the specimen can be securely prevented, and the accuracy of lithography can be improved, eliminating positional errors of lithography. |
