| 摘要 |
PURPOSE:To make LASER oscillation with a low threshold current, by nullifying invalid current not contributing to LASER oscillation, and concentrating the whole current to a region where LASER is oscillated. CONSTITUTION:AlGaAs and GaAs are accumulated as designated on a GaAs substrate 1 as usual, and a V-groove 7 is formed. Zn is diffused on a surface narow in width including the groove 7. A P layer 8a is formed penetrating through an N type AlGaAs layer 5 and reaching a P type AlGaAs layer 4. Another Zn is diffused and P layers 11a, 11b are formed penetrating through a P type GaAs active layter 3 and reaching an N type AlGaAs layer 2. The junction between layers 2 and 3 under the groove 7 is formed with a narrow interval. An electrode 9a is attached on the layers 11a, 11b via an insulating film 12. The diffusion potential between P layers 11a, 11b and the N layer 2 is higher than that of narrow P-N junction between layers 3 and 2. Therefore, current is concentrated to the narrow junction. The LASER oscillation is performed efficiently with decrease of invalid current and with threshold current lower than before. |
