| 摘要 |
PURPOSE:To perform transformation into a material suitable for a photoelectric conversion device by a method wherein a conduction type is set by a P type or N type impurity of a specific quantity added into a semiconductor which was changed into an intermediate stable structure between an amorphous structure and a crystal, and an energy band is widen by addition of nitrogen, etc. CONSTITUTION:By an Si film fabricated at a temperature of or below 700 deg.C by for example SiH4 decomposed in a glow discharge, and anneald in H2 or He by plasma, an Si film of a semi-amorphous structure which has a stable free energy is formed. An impurity of B2H6 etc. having III valence or PH5 etc. having V valence of or below 5mol% is added into this reaction gas. By this method, transformation into a P type or N type film having high conductivity is possible. And by addition of N, O, or C into the film through introduction of NH3, O2 or CH4 into reaction gas, an energy band can be made to be 1.6-3.0cV in accordance with this added quantity. By this method, fabrication of a device having a high photoelectric conversion efficiency can be obtained. |
