| 摘要 |
PURPOSE:To prevent reduction of throughput of an electron beam exposure device by a method wherein after exposure is finished, an inert gas is filled up in a wafer holder in a column of the exposure device, and the holder is taken out from a sample chamber. CONSTITUTION:When a resist pattern is to be formed by electron beam exposure using a negative resist, the inert gas is filled up in the wafer holder in the column of electron beam exposure device after exposure is finished, then the wafer is taken out from the sample chamber, and polymerization of resist is made to be performed in the wafer holder thereof. Accordingly, because it becomes unnecessary to keep the column inside at vacuum state, throughput of the device is enhanced. |
