| 摘要 |
PURPOSE:To improve the reliability of a wiring layer in a semiconductor device by extending with metal ohmically contacted with a GaAs active layer on an insulating film and plating gold with the ohmic metal as a primary layer metal. CONSTITUTION:After a gate wiring electrode 13 is formed on a GaAs semi- insulating substrate 11 formed with an active layer 12, an insulating film layer 17 is covered, and the insulating film layer of the drain and source ohmic electrode parts is etched and removed. After gold-germanium or the like is ohmically coated and alloyed on the part removed with the insulating film layer and the source wiring electrode part on the layer 17, gold is plated directly on the metal 19. The gold-germanium has strong adhesiveness with the insulating film, and is adapted for the wiring layer. Accordingly, source ohmic electrode, source bonding electrode and source wiring electrode can be simultaneously formed, thereby shortening the steps and improving the yield. |
