| 摘要 |
PURPOSE:To obtain an NPN transistor with high speed and high pressure resistance by a method wherein a Ga solution containing Si as impurities is used to make a collector layer and a base layer to grow through the liquid phase grow of a slow-cooling system by changing the temperature of the solution. CONSTITUTION:An N type GaAs substrate 1 is set on a substrate holding plate 2 in a furnace to arrange a Ga solution having the GaAs solute and the Si impurities in a solution holder 4 to make the sliders 5 and 6 to travel for making an N type GaAs collector layer and a P type GaAs base layer to grow by slow cooling by turns and continuously. Thereby the Ga solution 3 is made to once go up to the temperature higher than the N-P reverse temperature for slowly cooling after fully solving the solute. Accordingly, when slowly cooling from the temperature higher than the N-P reverse temperature, the N type collector layer grows on the substrate 1, while the carrier density thereof reduces slowly. When dropping under the N-P reverse temperature, the P type base layer grows, while the carrier density thereof increases slowly. |
