| 摘要 |
PURPOSE:To reduce the capacity of the gate of an MOS transistor by forming an offset in a region in which the oozing of carrier from source and drain to a substrate is superior to the quantity of carrier induced by a gate electrode between source, drain diffused layers and the gate electrode. CONSTITUTION:After a gate polysilicon 3 is formed on a substrated formed with a gate oxidized film 5, the side of the polysilicon 3 is oxidized to form an oxidized film 46 having 3,000Angstrom thick on the side of the polysilicon. It is then ion injected and annealed to form a source 1 and a drain 2, a silicon oxidized film 47 is grown, a contacting hole is opened, and a metal wire is laid. At this time the offset DELTAL between the gate polysilicon 3, source 1 and the drain 2 is approx. 5,000Angstrom , and is set by the secondary analysis of the carrier density distribution. |
